Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition. Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene. Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes. Heterogeneous integration of single-crystalline complex-oxide membranes. Polarity governs atomic interaction through two-dimensional materials. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. #Singlecrystal crackControlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Damage-free separation of GaN thin films from sapphire substrates. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Extreme selectivity in the lift‐off of epitaxial GaAs films. Yablonovitch, E., Gmitter, T., Harbison, J. III–V solar cells grown on unpolished and reusable spalled Ge substrates. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices. #Singlecrystal how toHow to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles 3. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials 2. Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems 1. Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |